Journal of Optoelectronical Nanostructures، جلد ۶، شماره ۳، صفحات ۸۱-۹۲

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عنوان انگلیسی The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot
چکیده انگلیسی مقاله In this work, we calculated the energy levels of truncated
pyramidal-shaped InAs/GaAs QDs by using the finite
element method by taking into account the ambient
temperature, because the system under study is not
symmetric, it is impossible to use the analytical method
to find the wave functions and energy levels of the
electron, and the finite element method is the solution to
such problems. We showed that, with increasing the
temperature, the energy level of both the ground state and
the first excited state as well as S-to-P transition
frequency increase. But the important point was that,
increasing the temperature can shift linear and nonlinear
susceptibility graphs to higher frequencies. For example,
for a pyramid with a base length of 25 nm and a height of
5 nm, at zero and 500 K the maximum linear and
nonlinear susceptibility values are shifted from 14
terahertz to the 18 terahertz. This ability can be effective
in designing optical devices.
کلیدواژه‌های انگلیسی مقاله Quantum Dot, Linear and Nonlinear Susceptibility, Ambient Temperature

نویسندگان مقاله MohammadAmin ZekavatFetrat |
Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran

Mohammad Sabaeian |
Department of Physics, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz, Iran Center for Research on Laser and Plasma, Shahid Chamran University of Ahvaz, Ahvaz, Iran

Ghahraman Solookinejad |
Center for Research on Laser and Plasma, Shahid Chamran University of Ahvaz, Ahvaz, Iran

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