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Journal of Optoelectronical Nanostructures، جلد ۱، شماره ۴، صفحات ۹-۲۰

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عنوان انگلیسی Quantum modeling of light absorption in graphene based photo-transistors
چکیده انگلیسی مقاله Graphene based optical devices are highly recommended and interested for integrated optical circuits. As a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. A quantum transport model is presented for simulation of a graphene nano-ribbon (GNR) -based photo-transistor based on non-equilibrium Green’s function method. In the proposed model a self-energy matrix is introduced which takes the effect of optical absorption in GNR channel into account. The self-energy matrix is treated as a scattering matrix which leads to creation of carriers. The transition matrix element is calculated for optical absorption in graphene channel and is used to obtain the optical interaction self-energy. The resulting self-energy matrix is added to retarded Green’s function and is used in transport equations for calculation of current flow in the photo-transistor. By considering the effect of optical radiation, the dark and photocurrent of detector are calculated and results are used for calculation of responsivity.
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نویسندگان مقاله حمید faezinia |
department of electronic engineering, tabriz branch, islamic azad university, tabriz, iran
سازمان اصلی تایید شده: دانشگاه آزاد اسلامی علوم و تحقیقات (Islamic azad university science and research branch)

مهدی زواری |
department of electronic engineering, urmia branch, islamic azad university, urmia, iran
سازمان اصلی تایید شده: دانشگاه آزاد اسلامی علوم و تحقیقات (Islamic azad university science and research branch)


نشانی اینترنتی http://jopn.miau.ac.ir/article_2196_78c9c073652404a762b7c98a455c5f1c.pdf
فایل مقاله اشکال در دسترسی به فایل - ./files/site1/rds_journals/1726/article-1726-347107.pdf
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زبان مقاله منتشر شده en
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