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Journal of Optoelectronical Nanostructures، جلد ۸، شماره ۳، صفحات ۰-۰
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عنوان انگلیسی Designing an InGaP/InAlGaP Double Junction Solar Cell Without an Anti-Reflection Coating by Adding a New Window Layer in the Upper Junction and Optimizing the Back Surface Field Layer
چکیده انگلیسی مقاله The present study proposes a novel indium gallium phosphide/aluminum gallium indium phosphide (InGaP/InAlGaP) double junction solar cell without an anti-reflection coating that includes an upper InGaP cell, a lower InAlGaP cell, and a gallium arsenide (GaAs) tunnel junction. In multi-junction solar cells, recombination of carriers occurs on the cell surface as well as in the inner parts of each cell. To increase the efficiency of the cell, a new window layer was used at the upper junction. To achieve higher efficiency, the researchers also optimized the back surface field layer of the lower cell. The results were analyzed via numerical modeling with Silvaco/Atlas software under the AM1.5 radiation spectrum. Findings suggested that using the sun=1 parameter, the obtained maximum values of short-circuit current, open-circuit voltage, fill factor, and efficiency parameters for the proposed solar cell structure were Jsc = 24.078 mA/cm2, Voc = 3.41886, FF = 91.1836, and Eff = 71.721%, respectively.
کلیدواژه‌های انگلیسی مقاله Solar Cell, Anti Reflecting Coating, Optimization Design, Back Surface Field
نویسندگان مقاله Neda Hasanzadeh Bishegahi |
Department of Electrical Engineering, Rasht Branch, Islamic Azad university, Rasht, Iran

Abdollah Eskandarian |
Department of Electrical Engineering, Rasht Branch, Islamic Azad university, Rasht, Iran

Abbas Ghadimi |
Department of Electrical Engineering, Lahijan Branch, Islamic Azad University, Lahijan, Iran

Ali Esmaeeli |
Department of Electrical Engineering, Rasht Branch, Islamic Azad university, Rasht, Iran

نشانی اینترنتی https://jopn.marvdasht.iau.ir/article_6052_4336875a21293ba8405fa0b62cac2be6.pdf
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