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Iranian Journal of Materials Science and Engineering، جلد ۲۰، شماره ۲، صفحات ۱-۷

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عنوان انگلیسی Multicrystalline Silicon Passivation by Hydrogen and Oxygen- Rich Porous Silicon Layer for Photovoltaic Cells Applications
چکیده انگلیسی مقاله In this work, we demonstrate the beneficial effect of introducing a superficial porous silicon layer on the electronic quality of multi-crystalline silicon for photovoltaic cell application. The porous silicon was formed using an acid vapor etching-based method. The porous silicon layer rich in hydrogen and oxygen formed by vapor etching is an excellent passivating agent for the mc-Si surface. Laser beam-induced current (LBIC) analysis of the exponentiation parameter (n) and surface current mapping demonstrates that oxygen and hydrogen-rich porous silicon led to excellent surface passivation with a strong electronic quality improvement of multi-crystalline silicon.  It was found that the generated current of treated silicon by acid vapor etching-based method is 20 times greater as compared to the reference substrate, owing to recombination centers passivation of the grains and grain boundaries (GBs); The actual study revealed an apparent decrease in the recombination velocity of the minority carrier as reflected by 25% decrease in the exponentiation parameter (n) of the LBIC versus X-position measurements. These results make achieved porous silicon a good option for advancing efficient photovoltaic cells.   
کلیدواژه‌های انگلیسی مقاله Multi-crystalline silicon,Laser beam induced current,Vapor etching,Oxygen and hydrogen,Passivation.

نویسندگان مقاله | Aqeel Mohammed Hamoudi
Research and Technology Centre of Energy


| Karim Choubani
College of Engineering, Imam Mohammad Ibn Saud Islamic University, Riyadh, Saudi Arabia


| Mohamed Ben Rabha
CRTEn



نشانی اینترنتی http://ijmse.iust.ac.ir/browse.php?a_code=A-10-4596-1&slc_lang=en&sid=1
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زبان مقاله منتشر شده en
موضوعات مقاله منتشر شده Materials engineeing and special subjects
نوع مقاله منتشر شده Research Paper
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