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Journal of Optoelectronical Nanostructures، جلد ۷، شماره ۲، صفحات ۵۱-۶۲
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عنوان انگلیسی The influence of substrate preparation conditions on the Raman spectra of In2S3 thin films prepared by physical vapor deposition
چکیده انگلیسی مقاله In this paper, we employed Raman spectroscopy toinvestigate Indium sulfide thin layer films deposited onglass substrates using the PVD method. The results showedthat the bandwidth and Raman shift of different In2S3 thinfilms depended on the annealing temperature. In addition,the crystallization stage from tetragonal to cubic occurredat the excessive temperature range of 350-400 °C. TheRaman spectroscopy of the In2S3 thin films beforeannealing and at 300 °C indicated the existence of β- In2S3at 70, 166 and 281 cm-1 in the active modes of the spectra.New modes that were related to α-In2S3 appeared at 126,244, and 266 cm-1 after thermal treatment at 400 °C for 30and 60 min. Our results are in agreement with the phasetransitions observed from the XRD analysis of In2S3 thinfilms. There are few reports about the Raman spectroscopyof In2S3 thin layer films deposited using vacuum thermalevaporation. In the present paper, the Raman spectra ofIn2S3 thin films with different thicknesses as well as theeffects of temperature on their depositions in vacuum wereexamined.
کلیدواژه‌های انگلیسی مقاله buffer layer, In2S3, Raman spectroscopy, structure, Thin films
نویسندگان مقاله Bashir Eghbalifar |
Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran

Heydar Izadneshan |
Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran

Ghahraman Solookinejad |
Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran

Leila Separdar |
Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran

نشانی اینترنتی https://jopn.marvdasht.iau.ir/article_5265_271ad821ce5e7ea44811c3d68153b38a.pdf
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