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Iranian Journal of Materials Science and Engineering، جلد ۶، شماره ۲، صفحات ۱۱-۱۷
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چکیده فارسی مقاله
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عنوان انگلیسی VERY DEEP TRENCHES IN SILICON WAFER USING DRIE METHOD WITH ALUMINUM MASK
چکیده انگلیسی مقاله Abstract: In this paper, a DRIE process for fabricating MEMS silicon trenches with a depth of more than 250 m is described. The DRIE was produced in oxygen-added sulfur hexafluoride (SF6) plasma, with sample cooling to cryogenic temperature using a Plasmalab System 100 ICP 180 at different RF powers. A series of experiments were performed to determine the etch rate and selectivity of the some masking materials such as resists, and metal (Al). Experiments show that different materials have different etch rates, but for the Al mask, an etch rate of 5.44x10-3 nm/min was achieved, that exhibits very stronger resistance against RIE than resists. By controlling the major parameters for plasma etch, an etch rate of 2.85 microns per minute for silicon and a high selectivity of 5.24x105 to the Al etch mask have been obtained. A 90 min etching experiments using etching gas SF6 of 60 standard cubic centimeters per minutes (sccm) with oxygen (13 sccm) were performed by supplying RF power of 5 W to an ICP of 600 watts, and silicon etching process with a depth of 257 m was demonstrated. Our experiments show that Al is the best mask material for very deep trenches in silicon.
کلیدواژه‌های انگلیسی مقاله
نویسندگان مقاله b a گنجی | b a ganji
1department of electrical engineering, babol university of technology, 484 babol, iran


b yeop majlis | b yeop majlis
2institute of microengineering and nanoelectronics imen , universiti kebangsaan malaysia,bangi, selangor, malaysia
نشانی اینترنتی http://ijmse.iust.ac.ir/browse.php?a_code=A-10-3-94&slc_lang=en&sid=en
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کد مقاله (doi)
زبان مقاله منتشر شده en
موضوعات مقاله منتشر شده گروه سرامیک
نوع مقاله منتشر شده Research paper
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